IRF540 MOSFET – 100V 33A N-Channel HEXFET Power MOSFET

IRF540 third generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. Features • Dynamic dV/dt rating • Repetitive avalanche rated • Fast switching • Ease of paralleling • Simple drive requirements • Compliant to RoHS directive 2002/95/EC Detailed Specifications   Number of Channels 1 Channel Transistor Polarity N-Channel Drain-Source Breakdown Voltage (Vds) 100V Continuous Drain Current (Id) 33A Drain-Source Resistance (Rds On) 44mOhms Gate-Source Voltage (Vgs) 20V Gate Charge (Qg) 71 nC Operating Temperature Range -55 – 175°C Power Dissipation (Pd) 130W