IRF3205 MOSFET – 55V 110A N-Channel HEXFET Power MOSFET

IRF3205 is Advanced HEXFET® Power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. Features:- • Advanced process technology • Ultra low on-resistance • Dynamic dv/dt rating • Fast switching • Fully avalanche rated Detailed Specifications:- Number of Channels 1 Channel Transistor Polarity N-Channel Drain-Source Breakdown Voltage (Vds) 55V Continuous Drain Current (Id) 110A Drain-Source Resistance (Rds On) 8mOhms Gate-Source Voltage (Vgs) 20V Gate Charge (Qg) 146 nC Operating Temperature Range -55 – 175°C Power Dissipation (Pd) 200W